收藏本站
29 of 30
May 12, 2010
 
IDT Confidential
Use in a Memory Module
In the Dual Inline Memory Module (DIMM) application, the TSE2002B3C is soldered directly onto the printed circuit module. The three Select
Address inputs (SA0, SA1, SA2) must be connected to V
SSSPD
 or V
DDSPD
directly (that is without using a pull-up or pull-down resistor) through the
DIMM socket (as shown in the Unique Addressing table). The pull-up resistors needed for normal behavior of the I
2
C bus are connected on the I
2
C
bus of the mother-board
Unique Addressing of SPDs in DIMM Applications
Note: 0 = V
SSSPD
, 1 = V
DDSPD
.
The Event pin is expected to be used in a wire-OR configuration with a pull-up resistor to VDDSPD on the motherboard. In this configuration,
EVENT should be programmed for the active low mode. Also note that comparator mode or TCRIT-only mode for EVENT on a wire-OR bus will show
the combined results of all devices wired to the EVENT signal.
Programming the TSE2002B3C
The situations in which the TSE2002B3C is programmed can be considered under two headings:
"   When the DIMM is isolated (not inserted on the PCB motherboard)
"   When the DIMM is inserted on the PCB motherboard
DIMM Isolated
With specific programming equipment, it is possible to define the TSE2002B3C content, using Byte and Page Write instructions, and its
write-protection using the SWP and CWP instructions. To issue the SWP and CWP instructions, the DIMM must be inserted in the application-specific
slot where the SA0 signal can be driven to VHV during the whole instruction. This programming step is mainly intended for use by DIMM makers,
whose end application manufacturers will want to clear this write-protection with the CWP on their own specific programming equipment, to modify the
lower 128 Bytes, and finally to set permanently the write-protection with the PSWP instruction.
DIMM Inserted in the Application Mother Board
As the final application cannot drive the SA0 pin to V
HV
, the only possible action is to freeze the write-protection with the PSWP instruction. Refer
to the Acknowledge When Writing Data or Defining Write Protection table on how the Ack bits can be used to identify the write-protection status.
DIMM Position
SA2
SA1
SA0
0
0
0
0
1
0
0
1
2
0
1
0
3
0
1
1
4
1
0
0
5
1
0
1
6
1
1
0
7
1
1
1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IPM6220ACAZ-T IC REG 5OUT BUCK/LDO SYNC 24SSOP
IR2170 IC CURRENT SENSE 600V 1MA 8-DIP
IR2171STR IC CURRENT SENSE 8SOIC
IR2172S IC CURRENT SENSE 8SOIC
IR2175STR IC CURRENT SENSE 0.5% 8SOIC
IR22771STRPBF IC CURRENT SENSE 16SOIC
IRU3073CQTR IC REG DL BCK/LINEAR 16-QSOP
ISL25700FRUZ-TK IC TEMP SWITCH MFET DRVR 10TQFN
相关代理商/技术参数
IDTTSE2002B3CNRG8 功能描述:IC TEMP SENS EEPROM DFN-8 RoHS:是 类别:集成电路 (IC) >> PMIC - 热管理 系列:- 标准包装:3,000 系列:- 功能:温度开关 传感器类型:内部 感应温度:85°C 分界点 精确度:±6°C（最小值） 拓扑:ADC（三角积分型），比较器，寄存器库 输出类型:开路漏极 输出警报:是 输出风扇:是 电源电压:2.7 V ~ 5.5 V 工作温度:-55°C ~ 125°C 安装类型:表面贴装 封装/外壳:SC-74A，SOT-753 供应商设备封装:SOT-23-5 包装:带卷 (TR) 其它名称:ADT6501SRJZP085RL7-ND
IDTTSE2002GB2A1NCG 制造商:Integrated Device Technology Inc 功能描述:IC TEMP SENS EEPROM DFN-8
IDTTSE2002GB2A1NCG8 制造商:Integrated Device Technology Inc 功能描述:IC TEMP SENS EEPROM DFN-8
IDTTSE2002GB2A1NRG 制造商:Integrated Device Technology Inc 功能描述:IC TEMP SENS EEPROM DFN-8
IDTTSE2002GB2A1NRG8 制造商:Integrated Device Technology Inc 功能描述:IC TEMP SENS EEPROM DFN-8
IDTTSI107C-100JE 制造商:Integrated Device Technology Inc 功能描述:IC HOST BRIDGE POWERPC 503FCPBGA
IDTTSI107D-100JE 制造商:Integrated Device Technology Inc 功能描述:IC PCI-PCI BRIDGE 32BIT 503BGA
IDTTSI107D-100JEY 制造商:Integrated Device Technology Inc 功能描述:IC PCI-PCI BRIDGE 32BIT 503BGA